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MF1359-02
ASIC DESIGN GUIDE
CMOS 32
-
BIT SINGLE CHIP MICROCOMPUTER
Embedded Array S1X50000 Series
S1C33
Seitenansicht 0
1 2 3 4 5 6 ... 97 98

Inhaltsverzeichnis

Seite 1 - ASIC DESIGN GUIDE

MF1359-02ASIC DESIGN GUIDECMOS 32-BIT SINGLE CHIP MICROCOMPUTER Embedded Array S1X50000 SeriesS1C33

Seite 2 - 2001 All rights reserved

1 Product Overview4EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES(*) SNRC: Net list rule checkerTable 1.1 Work Involved in Each Step of

Seite 3

1 Product OverviewS1C33 ASIC DESIGN GUIDEEPSON5EMBEDDED ARRAY S1X50000 SERIESFigure 1.2 Division of Responsibility in the Development Process

Seite 4

1 Product Overview6EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESES (engineering sample) productionQualification of mass productionFuncti

Seite 5 - Contents

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON7EMBEDDED ARRAY S1X50000 SERIESChapter 2 C33 Macro Specifications2.1 OverviewThe C33 macro mode

Seite 6

2 C33 Macro Specifications8EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES2.2 Block DiagramFigure 2.1 C33 Macro Block DiagramTerminologyB

Seite 7 - Chapter 1 Product Overview

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON9EMBEDDED ARRAY S1X50000 SERIESSBUS: Bus control block that has an address/data bus structure c

Seite 8

2 C33 Macro Specifications10EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES2.3 C33 Macro Pins(1) C33 Macro - Required pins (pad connection

Seite 9

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON11EMBEDDED ARRAY S1X50000 SERIES(2) C33 Macro - Optional pins (pad connections) (12 pins)Table

Seite 10 - S1C33 ASIC DESIGN GUIDE

2 C33 Macro Specifications12EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES(3) C33 Macro - Peripheral function pins (pad connections) (44

Seite 11 - Continued on following page

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON13EMBEDDED ARRAY S1X50000 SERIES(*) Pins P_P10 to P_P14 are used as S5U1C33000H interface pins.

Seite 12 - 1 Product Overview

NOTICENo part of this material may be reproduced or duplicated in any form or by any means without the writtenpermission of Seiko Epson. Seiko Epson r

Seite 13 - 2.1 Overview

2 C33 Macro Specifications14EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESTable 2.3.5 User Logic Interface PinsConnection: User logicPin

Seite 14 - 2.2 Block Diagram

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON15EMBEDDED ARRAY S1X50000 SERIES2.4 Special SignalsThe U_BUSSZ[1:0] and U_BUSMD[2:0] signals in

Seite 15 - 2 C33 Macro Specifications

2 C33 Macro Specifications16EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESThe U_RST_X signal outputs the value of the P_RESETX pad pin sh

Seite 16 - 2.3 C33 Macro Pins

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON17EMBEDDED ARRAY S1X50000 SERIES2.6 Electrical CharacteristicsThe C33 macro I/O cell library is

Seite 17

2 C33 Macro Specifications18EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES2.6.2 Recommended Operating Conditions1) 3.3V single power sour

Seite 18

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON19EMBEDDED ARRAY S1X50000 SERIES3) 3.3 V/5.0 V dual power source(VSS=0V)*1: Either 5.25 V or 5.

Seite 19

2 C33 Macro Specifications20EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES2.6.3 DC Characteristics1) 3.3V/5.0V dual power source (Unless

Seite 20

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON21EMBEDDED ARRAY S1X50000 SERIES3) 2.0V single power source(Unless otherwise specified: VDD=1.

Seite 21 - 2.5 Clock and Reset Signals

2 C33 Macro Specifications22EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES2) 2.0V single power source (Unless otherwise specified: VDD=1

Seite 22 - C33 MACRO

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON23EMBEDDED ARRAY S1X50000 SERIES2) 3.3V single power source(Unless otherwise specified: VDD=AVD

Seite 23

The information of the product number changeConfiguration of product numberDevicesComparison table between new and previous numberS1C33 Family process

Seite 24 - 2) 2.0V

2 C33 Macro Specifications24EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES2.6.6 AC CharacteristicsThe C33 macro block AC characteristics

Seite 25

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON25EMBEDDED ARRAY S1X50000 SERIES2.6.6.1 Symbol DescriptiontCYC: Bus-clock cycle time• In x1 mo

Seite 26 - 2.6.3 DC Characteristics

2 C33 Macro Specifications26EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES2.6.6.2 AC Characteristics Measurement ConditionSignal detectio

Seite 27 - 2.6.4 Current Consumption

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON27EMBEDDED ARRAY S1X50000 SERIES2.6.6.3 AC Characteristics Tables (I/O Buffer Pins)The tables i

Seite 28 - 3) Analog power current

2 C33 Macro Specifications28EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESBCLK clock output chracteristicsNote: These AC characteristic

Seite 29 - ■ Full scale error

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON29EMBEDDED ARRAY S1X50000 SERIES2) 3.3V single power source(Unless otherwise specified: VDD=2.

Seite 30 - 2.6.6 AC Characteristics

2 C33 Macro Specifications30EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES2) 3.3V single power source(Unless otherwise specified: VDD=2.7

Seite 31 - 2.6.6.1 Symbol Description

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON31EMBEDDED ARRAY S1X50000 SERIESDRAM access cycle common characteristicsThe #RAS and #CAS symbo

Seite 32

2 C33 Macro Specifications32EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES3) 2.0V single power source(Unless otherwise specified: VDD=1.8

Seite 33

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON33EMBEDDED ARRAY S1X50000 SERIESEDO DRAM random access cycle and EDO DRAM page cycle1) 3.3V/5.0

Seite 35 - 1) 3.3/5.0V dual power source

2 C33 Macro Specifications34EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESBurst ROM read cycle1) 3.3V/5.0V dual power source(Unless other

Seite 36

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON35EMBEDDED ARRAY S1X50000 SERIES1) 3.3V/5.0V dual power source(Unless otherwise specified: HVDD

Seite 37

2 C33 Macro Specifications36EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESInput, Output and I/O portThe tables in this section stipulate

Seite 38 - 2) 3.3V single power source

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON37EMBEDDED ARRAY S1X50000 SERIES2.6.6.4 AC Characteristics Timing Charts (I/O Buffer Pins)This

Seite 39

2 C33 Macro Specifications38EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESSRAM read cycle (when a wait cycle is inserted)∗1tRDH is measur

Seite 40

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON39EMBEDDED ARRAY S1X50000 SERIESSRAM write cycle (when wait cycles are inserted)DRAM random acc

Seite 41

2 C33 Macro Specifications40EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESDRAM fast-page access cycle∗1tRDH is measured with respect to t

Seite 42 - Input, Output and I/O port

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON41EMBEDDED ARRAY S1X50000 SERIESEDO DRAM page access cycle∗1tRDH is measured with respect to th

Seite 43 - P_A[23:0] signals

2 C33 Macro Specifications42EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESBurst ROM read cycle∗1tRDH is measured with respect to the firs

Seite 44

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON43EMBEDDED ARRAY S1X50000 SERIES2.6.6.5 AC Characteristics Tables (User Logic Interface)The tab

Seite 45

ContentsS1C33 ASIC DESIGN GUIDE EPSONiEMBEDDED ARRAY S1X50000 SERIESContentsChapter 1 Product Overview ...

Seite 46 - DRAM fast-page access cycle

2 C33 Macro Specifications44EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESCommon Characteristics (User Logic Interface)The VDD and VSS le

Seite 47 - DRAM self-refresh cycle

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON45EMBEDDED ARRAY S1X50000 SERIES2.6.6.6 AC Characteristics Timing Charts (User Logic Interface)

Seite 48 - Burst ROM read cycle

2 C33 Macro Specifications46EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESResetSRAM read cycle (Basic cycle: 1 cycle)∗1tRDH is measured w

Seite 49

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON47EMBEDDED ARRAY S1X50000 SERIESSRAM read cycle (when a wait cycle is inserted)∗1tRDH is measur

Seite 50

2 C33 Macro Specifications48EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESSRAM write cycle (when wait cycles are inserted)Input, output a

Seite 51 - Clock signals

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON49EMBEDDED ARRAY S1X50000 SERIES2.6.6.7 Oscillation CharacteristicsOscillation characteristics

Seite 52

2 C33 Macro Specifications50EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESOSC3 crystal oscillationNote: A "crystal resonator that us

Seite 53 - (C1 only)

2 C33 Macro SpecificationsS1C33 ASIC DESIGN GUIDEEPSON51EMBEDDED ARRAY S1X50000 SERIES2.6.6.8 PLL CharacteristicsSetting the PLLS0 and PLLS1 pins (re

Seite 54

3 C33 Test Functions52EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESChapter 3 C33 Test Functions3.1 Test Function OverviewThe C33 macro

Seite 55 - OSC1 crystal oscillation

3 C33 Test FunctionsS1C33 ASIC DESIGN GUIDEEPSON53EMBEDDED ARRAY S1X50000 SERIES3.2 DC/AC Test Mode (TST_DCT mode)3.2.1 Procedure to Enter Test Mod

Seite 56 - OSC3 ceramic oscillation

ContentsiiEPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESChapter 4 Special Operations in ASICs that Include C33 Macros ... 624.1 Special

Seite 57 - 2.6.6.8 PLL Characteristics

3 C33 Test Functions54EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES3.2.2 Test ModeIn the DC/AC test mode, the user I/O cells are control

Seite 58 - Chapter 3 C33 Test Functions

3 C33 Test FunctionsS1C33 ASIC DESIGN GUIDEEPSON55EMBEDDED ARRAY S1X50000 SERIES3) Input logic level verification modeP_X2SPDX (IP0) ... Fixed at the

Seite 59 - 3 C33 Test Functions

3 C33 Test Functions56EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES$PATTERN# PPPPPPPPPPPPPPPPPPPPPPPPBOO# ________________________IUU# R

Seite 60 - 3.2.2 Test Mode

3 C33 Test FunctionsS1C33 ASIC DESIGN GUIDEEPSON57EMBEDDED ARRAY S1X50000 SERIES108 111P11L000000000000000000ZH Since this example is the result of s

Seite 61 - <APF Format Example>

3 C33 Test Functions58EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESFigure 3.2 Sample Pattern WaveformsGroup: AP_OSC3 = XP_TST = 0

Seite 62 - $PATTERN

3 C33 Test FunctionsS1C33 ASIC DESIGN GUIDEEPSON59EMBEDDED ARRAY S1X50000 SERIES3.3 User Circuit Test Mode (TST_USER mode)3.3.1 Procedure to Enter

Seite 63

3 C33 Test Functions60EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES3.3.2 Test ModeIn user circuit test mode, the clock, address, data, r

Seite 64

3 C33 Test FunctionsS1C33 ASIC DESIGN GUIDEEPSON61EMBEDDED ARRAY S1X50000 SERIESCaution: Provide the chip enable signal to the user circuit as shown

Seite 65

4 Special Operations in ASICs that Include C33 Macros62EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESChapter 4 Special Operations in ASI

Seite 66 - 3.3.2 Test Mode

4 Special Operations in ASICs that Include C33 MacrosS1C33 ASIC DESIGN GUIDE EPSON63EMBEDDED ARRAY S1X50000 SERIES4.3 Verifying the Constraints on th

Seite 67

1 Product OverviewS1C33 ASIC DESIGN GUIDEEPSON1EMBEDDED ARRAY S1X50000 SERIESChapter 1 Product Overview1.1 IntroductionThis product, abbreviated here

Seite 68 - C33 Macros

4 Special Operations in ASICs that Include C33 Macros64EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESFigure 4.1 Sample Floorplan and Pin

Seite 69 - 4.3.4 Floorplan

4 Special Operations in ASICs that Include C33 MacrosS1C33 ASIC DESIGN GUIDE EPSON65EMBEDDED ARRAY S1X50000 SERIES4.4 Connections between User I/O,

Seite 70 - User circuits

4 Special Operations in ASICs that Include C33 Macros66EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES4.4.4 Connections between C33 Macro

Seite 71

4 Special Operations in ASICs that Include C33 MacrosS1C33 ASIC DESIGN GUIDE EPSON67EMBEDDED ARRAY S1X50000 SERIES4.5 Test Pattern Creation4.5.1 DC/A

Seite 72 - C33 macro

5 Simulation68EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY SSL50000 SERIESChapter 5 Simulation5.1 Design FlowchartFigure 5.1 Design FlowchartBulk Desi

Seite 73 - 4.5 Test Pattern Creation

5 SimulationS1C33 ASIC DESIGN GUIDEEPSON69EMBEDDED ARRAY S1X50000 SERIESFigure 5.2 Simulation FlowchartNote: Current there is only a gate level simu

Seite 74 - Chapter 5 Simulation

5 Simulation70EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY SSL50000 SERIES5.2 System Level SimulationFigure 5.3 System Level Simulation5.3 Test Patter

Seite 75 - Test bench creation script

5 SimulationS1C33 ASIC DESIGN GUIDEEPSON71EMBEDDED ARRAY S1X50000 SERIES5.4 Simulation Environment5.4.1 Operating EnvironmentThe standard simulation

Seite 76 - 5.3 Test Pattern Creation

5 Simulation72EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY SSL50000 SERIESThe C33 macro net list consists of the hard macros, the soft macros, and the

Seite 77 - 5.4 Simulation Environment

5 SimulationS1C33 ASIC DESIGN GUIDEEPSON73EMBEDDED ARRAY S1X50000 SERIES5.5.3 Simulation Execution ScriptThe C33 simulation is executed by the follow

Seite 78 - 5.5 Running a Simulation

1 Product Overview2EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES• Other features: Little endian (Certain areas can be set up for big en

Seite 79 - 5 Simulation

5 Simulation74EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY SSL50000 SERIES Example 1) Normal simulationcsh> c33_sim.csh sample.asm trc=test1 tcyc=1

Seite 80 - 5.5.4 Test Bench Structure

5 SimulationS1C33 ASIC DESIGN GUIDEEPSON75EMBEDDED ARRAY S1X50000 SERIEScsh> grep //_ _ samplex_f10emux1.tb//_ _.../sim/verilog/ENV/tb/header.tb

Seite 81

5 Simulation76EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY SSL50000 SERIES5.6 Evaluation Program Creation5.6.1 asm33 Assembler PrototypeThe procedure f

Seite 82

5 SimulationS1C33 ASIC DESIGN GUIDEEPSON77EMBEDDED ARRAY S1X50000 SERIES(2) Limitations on registers, values, and labels• Character setThere are 3 de

Seite 83

5 Simulation78EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY SSL50000 SERIES5) Jump instructions that require an immediate value extended instruction mus

Seite 84

6 Board DevelopmentS1C33 ASIC DESIGN GUIDEEPSON79EMBEDDED ARRAY S1X50000 SERIESChapter 6 Board Development6.1 Development EnvironmentFigure 6.1 S1C3

Seite 85 - 6.1 Development Environment

6 Board Development80EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES• Host computer• Personal computer running Windows 95, 98, or NT• Soft

Seite 86 - 6 Board Development

6 Board DevelopmentS1C33 ASIC DESIGN GUIDEEPSON81EMBEDDED ARRAY S1X50000 SERIESFigure 6.2 S5U1C33XXE QFP InterfaceUser target boardFor mass producti

Seite 87

6 Board Development82EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES6.2 Evaluation Board DesignFigure 6.3 Board Development FlowchartDete

Seite 88 - 6.2 Evaluation Board Design

6 Board DevelopmentS1C33 ASIC DESIGN GUIDEEPSON83EMBEDDED ARRAY S1X50000 SERIES(1) Board development process (example 1)Step 1: Determine the C33 ASI

Seite 89

1 Product OverviewS1C33 ASIC DESIGN GUIDEEPSON3EMBEDDED ARRAY S1X50000 SERIES1.2 Interface and Design Process FlowchartFigure 1.1 Total Product Deve

Seite 90

6 Board Development84EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIES(2) Board development process (example 2)Use the following procedure w

Seite 91 - Chapter 7 Mounting

7 MountingS1C33 ASIC DESIGN GUIDEEPSON85EMBEDDED ARRAY S1X50000 SERIESChapter 7 Mounting7.1 Precautions on MountingThe following shows the precaution

Seite 92 - 7 Mounting

7 Mounting86EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESReset Circuit • The power-on reset signal which is input to the P_RESETX pin ch

Seite 93 - (back of the chip) is V

7 MountingS1C33 ASIC DESIGN GUIDEEPSON87EMBEDDED ARRAY S1X50000 SERIESRecommended CircuitCG2C1R1*1C23.3VCD2Rf2CG1CD1Rf1X`tal2or CRX`tal1A[23:0]D[23:0

Seite 94 - K60 (AD0)

7 Mounting88EPSONS1C33 ASIC DESIGN GUIDEEMBEDDED ARRAY S1X50000 SERIESArrangement of Signal Lines• In order to prevent generation of electromagnetic

Seite 95 - 7.2 Others

7 MountingS1C33 ASIC DESIGN GUIDEEPSON89EMBEDDED ARRAY S1X50000 SERIES7.2 OthersThe positions (layout) of the following pins is extremely important t

Seite 96

AMERICAEPSON ELECTRONICS AMERICA, INC.- HEADQUARTERS -150 River Oaks ParkwaySan Jose, CA 95134, U.S.A.Phone: +1-408-922-0200 Fax: +1-408-922-0238- S

Seite 97 - Epson IS energy savings

In pursuit of “Saving” Technology, Epson electronic devices.Our lineup of semiconductors, liquid crystal displays and quartz devicesassists in creatin

Seite 98

ASIC DESIGN GUIDES1C33ELECTRONIC DEVICES MARKETING DIVISIONhttp://www.epson.co.jp/device/First issue November, 2000 Printed March, 2001 in Ja

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